Sale!
Awaiting product image

Original price was: ₹40,000.00.Current price is: ₹35,000.00.

Here’s the technical description for the 2MBI1400VXB‑120P‑50 / 2MBI1400VXB‑120P‑54 IGBT module — a high-power semiconductor device used in industrial power electronics:

In short, the 2MBI1400VXB-120 series are high-power IGBT modules suited for switching heavy DC currents at up to ~1200 V, commonly used in large-scale industrial and power conversion systems.

Category:

Description

General Description

  • It’s a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for switching and controlling large electric currents at high voltages.

  • Part of the V Series (6th generation) of Fuji Electric power modules, optimized for low switching losses and strong thermal performance.

  • The module internally contains two IGBT switches (dual package) along with integrated free-wheeling diodes.

⚙️ Key Electrical Specifications

  • Collector-Emitter Voltage (V<sub>CES</sub>): 1200 V (voltage rating)

  • Continuous Collector Current (I<sub>C</sub>): 1400 A (rated current)

  • Gate-Emitter Voltage: ±20 V typical for IGBT operation

  • Junction Temperature Max: ≈175 °C

  • Package: M272 power module style (robust industrial format)

📦 Features & Benefits

  • Fast switching performance: Suited for high-efficiency power conversion.

  • Low inductance module design: Reduces switching losses and improves overall reliability.

  • High thermal and mechanical robustness: Designed for demanding environments with good heat handling.

  • Integrated diodes: Built-in free-wheeling diodes for safe current paths during switching.

📌 Common Applications

  • Motor drives and industrial inverters

  • Variable frequency drives (VFDs)

  • Uninterruptible Power Supplies (UPS)

  • Renewable energy power converters (e.g., solar/wind)