Description
Overview
The 2MBI150UM-120 is a 1200 V / 150 A insulated gate bipolar transistor (IGBT) power module manufactured by Fuji Electric (also branded under Fujitsu or similar variants). It’s designed for high-efficiency switching and medium-power industrial applications such as inverters and motor drives.
🔋 Key Specifications
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Device type: Dual-pack IGBT power module
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Rated voltage (Collector-Emitter): 1200 V
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Rated current: 150 A continuous
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Gate-Emitter voltage: ±20 V typical
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Typical saturation voltage (V<sub>CE(sat)</sub>): ~2.0 V at rated current (varies by datasheet)
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Operating junction temperature: up to ~150 °C
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Isolation voltage: ~2500 VAC between terminals and baseplate
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Package: Insulated module with mounts for chassis connection
This type of module integrates two IGBT switching devices (often configured as a half-bridge) and typically includes free-wheeling diodes to support bidirectional current flow and simplify external circuitry.
⚙️ Typical Features & Benefits
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High speed switching: Suitable for variable frequency drives and power converters.
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Low conduction losses: Optimized electrical characteristics for efficient power conversion.
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Thermal performance: Designed for lower thermal resistance with isolated baseplate for heat dissipation.
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Rugged construction: Can withstand industrial operating conditions with good reliability.
🚀 Common Applications
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AC and DC motor drives
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Industrial inverters and UPS systems
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Solar inverters and renewable energy converters
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Welding power supplies
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General medium-power power conversion systems
https://solissemiconductors.com/wp-content/uploads/2026/02/2MBI150UM-120-50.pdf