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Here’s a description of the IGBT Transistor Module 2MBI200VB-120-50, 2MBI150VB-120-50, 2MB (specifically in the same family as 2MBI150VB-120 IGBT modules):

Category:

Description

Overview

The 2MBI150VB-120 is a high-power IGBT (Insulated Gate Bipolar Transistor) module in a half-bridge (2-pack) configuration designed for industrial power conversion applications. It integrates two IGBT switches and their anti-parallel diodes in a single compact module, enabling efficient switching and power handling in medium-power systems such as inverters, motor drives, UPS units, and renewable energy converters.

⚙️ Key Specifications

  • Module Type: Dual IGBT in half-bridge configuration (standard 2-pack)

  • Voltage Rating (V<sub>CES</sub>): 1200 V

  • Continuous Collector Current: 150 A

  • Operating Junction Temperature: up to ~150–175 °C

  • Package: M274 insulated module with baseplate mounting

  • Thermal Characteristics: Low thermal resistance for good heat dissipation

  • Switching Features: Fast switching, low inductance internal layout for efficient operation

  • Typical Power Dissipation: ~780 W per IGBT (varies by use and cooling)

  • Isolation Voltage: ~2500 VAC between terminals and base for safety

🛠️ Applications

Commonly used in:

  • Variable frequency motor drives

  • UPS (Uninterruptible Power Supplies)

  • Solar and wind energy inverters

  • Industrial NC (numerical control) servo systems

  • Power conditioning and welding equipment