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Original price was: ₹10,000.00.Current price is: ₹9,000.00.

Here’s a concise description of the Fuji 2MBI600VN-120-50 (often referred to simply as 2MBI600VN‑120) IGBT power module:

Category:

Description

What it is

The 2MBI600VN‑120 is a high‑power IGBT (Insulated Gate Bipolar Transistor) module from Fuji Electric designed for industrial power conversion and motor control applications. It integrates two IGBT power transistors (a half‑bridge) with free‑wheeling diodes in a single isolated module package.

⚙️ Key Electrical Specifications

  • Voltage Rating: 1200 V (maximum collector‑emitter blocking voltage)

  • Current Rating: 600 A continuous collector current

  • Module Configuration: Dual IGBT half‑bridge with integrated diodes

  • Gate‑Emitter Voltage Range: ±20 V typical

  • Switching Speed: Fast switching with low losses (designed for efficient dynamic operation)

  • Operating Junction Temperature: Up to ~150 °C under high‑power switching conditions (higher absolute max ~175 °C)

🔧 Module Characteristics

  • 6th‑generation Fuji V‑series design: optimized for low inductance and fast switching performance

  • Insulated baseplate package for easier heat sinking and system integration

  • Thermal and electrical robustness: suitable for demanding conditions in power electronics systems

  • Package code: M254 (rectangular flange mount module)

🔌 Typical Applications

This IGBT module is broadly used in industrial and power systems such as:

  • Variable frequency drives (VFDs) and motor controllers

  • Solar and wind inverters

  • UPS (uninterruptible power supplies)

  • Power converters in renewable energy systems

  • High‑power welding and industrial equipment