Description

Overview

• Type: IGBT Module – a semiconductor power device that combines the high‑current capability of bipolar transistors with the fast switching of MOSFETs.

• Manufacturer: Fuji Electric (often distributed under Fujitsu brand listings).

• RoHS Status: Lead‑free / RoHS compliant.

⚡ Key Electrical Characteristics

• Rated Collector‑Emitter Voltage: ~1200 V (module can block and switch high DC voltages).

• Current Handling: Typically designed for around 100 A continuous current.

• Module Type: Six‑pack IGBT arrangement suitable for a three‑phase inverter bridge topography.

🔧 Typical Features

• High‑frequency switching: Optimized for efficient power conversion with lower losses.

• Robust thermal and mechanical design: Handles demanding industrial environments.

• Compact power module: Makes system assembly and heat‑sink mounting easier compared with discrete components.

📍 Common Applications

This IGBT module is used where efficient and reliable high‑power switching is needed, such as:

• Motor drives and inverters (AC, DC drives)

• Industrial automation equipment

• Renewable energy (solar/wind inverters)

• UPS (uninterruptible power supplies)

• Electric vehicle chargers and traction systems