Description
Component Overview — 6MBI25S‑120 IGBT Module
The 6MBI25S‑120 is a power semiconductor module (IGBT module) manufactured under the FUJI/Fuji Electric S‑series. It’s designed to switch and control high power in electronic drives with good efficiency and reliability.
🔋 Basic Description
-
Type: Insulated Gate Bipolar Transistor (IGBT) power module — 6 devices in one package.
-
Series: S‑series (standard Fuji Electric IGBT line).
-
Rating:
-
Voltage: 1200 V (maximum collector‑emitter voltage)
-
Current: 25 A nominal (with higher short‑pulse capability)
-
-
Construction: Six IGBTs integrated in a compact package, suitable for three‑phase bridge configurations.
⚙️ Key Features
-
Compact, PCB‑mount friendly module.
-
Low on‑state voltage (low VCE(sat)), contributing to efficient conduction.
-
Designed for high‑speed switching and low power losses.
-
Can handle industrial‑level power and thermal loads.
📈 Typical Applications
Common uses for a module like this include:
-
Motor drive inverters (AC/DC motor controls)
-
Uninterruptible Power Supplies (UPS) and converters
-
Servo drives and industrial control systems
-
Welding machines and other high‑power switching equipment
📊 Electrical Characteristics (Typical)
| Parameter | Value |
|---|---|
| Collector‑Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (Ic) | ~25 A at 80 °C (~35 A at 25 °C) |
| Pulse Current Capability | Higher in short pulses (e.g., ~70 A for 1 ms) |
| Gate‑Emitter Voltage (VGES) | ±20 V |
| Max Power Dissipation (per device) | ~180 W |
| Operating Temp | ~–40 °C to +150 °C |
| Storage Temp | ~–40 °C to +125 °C |
