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Original price was: ₹7,500.00.Current price is: ₹6,500.00.

The 6MBI25S-120-50 Fuji Electric IGBT module you asked about (commonly referenced as 6MBI35S-120) is a power semiconductor module used for switching and power‑control applications — specifically an IGBT (Insulated Gate Bipolar Transistor) module

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Description

Overview – 6MBI35S-120

  • Type: IGBT power module (Fuji Electric, S‑series).

  • Configuration: 6 transistors packaged together (6‑pack).

  • Voltage Rating: ~1200 V (able to block up to ~1.2 kV).

  • Current Rating: ~35 A continuous.

  • Technology: Planar gate / NPT IGBT design for efficient switching with relatively low saturation voltage and losses.

  • Package: Compact module designed for mounting on a PCB or heat‑sinked surface.

🔋 Key Characteristics

  • IGBT Functionality: Acts as a high‑speed semiconductor switch combining the high input impedance of a MOSFET with the high current and voltage handling of a bipolar transistor.

  • Integrated Components: Usually includes multiple IGBT switches and anti‑parallel diodes in a single module for three‑phase inverter legs or other power stages.

  • Thermal & Electrical Specs:

    • Typical max collector‑emitter voltage ~1200 V.

    • Power dissipation ~240 W (total module).

    • Operating junction temperatures up to ~150 °C.