Description

General Description

• Type: Insulated Gate Bipolar Transistor (IGBT) power module.

• Configuration: 6‑pack IGBT devices in a single integrated module — typically used as a three‑phase bridge (six switches).

• Voltage Rating: Up to 1200 V collector‑emitter breakdown voltage (V_CES).

• Current Rating: 50 A nominal collector current.

• Technology: Standard IGBT with integrated freewheeling diodes (packaged for PCB mounting).

• Construction: Silicon semiconductor with multiple IGBT switches and diodes in one package.

• Package: Compact, PCB‑mountable module usually with ~17 pins for gate, emitter, collector, and other connections.

• Manufactured by: Fuji Electric or equivalent suppliers.

⚙️ Typical Characteristics

• Low on‑state voltage drop — efficient conduction with reduced power loss.

• Fast switching performance — suitable for PWM inverter drives.

• Combined freewheeling diodes — simplifies design in motor and power applications.

• Thermal and electrical ratings: Modules are built to handle moderate power levels with defined temperature limits and heat dissipation requirements.

• RoHS compliant (lead‑free) in many versions marketed.

📍 Common Uses

• Motor drives (e.g., AC servo, induction motor inverters)

• UPS systems

• Industrial welding and power supplies

• Power conversion and control equipment where 1200 V / ~50 A switching is needed

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