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Here’s a description and overview of the 2MBI200S-120 Fuji Electric IGBT Module power semiconductor device:

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Description

What It Is

The 2MBI200S-120 is an insulated gate bipolar transistor (IGBT) module manufactured by Fuji Electric. IGBT modules are high-power switching devices widely used in industrial and power electronics systems where efficient control of large currents and voltages is required.

🔋 Key Description

  • Type: Dual IGBT power module in a single package.

  • Voltage Rating (VCES): 1200 V — suitable for high-voltage applications.

  • Current Rating: 200 A continuous (higher pulses possible).

  • Configuration: Two IGBTs integrated in a half-bridge or dual arrangement.

  • Function: Fast, efficient switching of high power in electronic systems.

⚙️ Typical Features

  • Fast switching capabilities with low conduction and switching losses.

  • Low on-state voltage drop (VCE(sat)) for improved efficiency.

  • Integrated freewheeling diodes (in many variants) to support inductive loads.

  • Robust thermal and electrical performance for industrial use.

  • High isolation voltage (e.g., ~2500 V between terminals and case) for safe operation.

⚙️ Typical Applications

IGBT modules like the 2MBI200S-120 are commonly used in:

  • Motor drives and variable frequency drives (VFDs)

  • Solar/wind inverter power converters

  • Uninterruptible Power Supplies (UPS)

  • Welding machines and industrial heating systems

  • Power supplies and large DC-AC/AC-DC converters

📊 General Electrical Characteristics

Although the exact values may vary slightly by datasheet version, typical module parameters include:

  • Continuous current: ~200 A at rated case temperature

  • Pulse current: several hundred amps (short duration)

  • Operating junction temperature: up to ~150 °C

  • Gate-Emitter voltage (VGES): ±20 V typical

  • Power dissipation: high (hundreds to ~1500 W depending on duty)