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Original price was: ₹7,500.00.Current price is: ₹6,500.00.

Here’s a description of the 2MBI200UM-120-50 (commonly referenced as 2MBI200UM‑120 in documentation) — a power semiconductor module used in high‑power electronics:

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Description

What It Is

This part is a Fuji Electric IGBT (Insulated Gate Bipolar Transistor) power module designed for high‑power switching and conversion tasks. It integrates power IGBTs and usually fast recovery diodes in a single compact module package. These devices act as high‑efficiency electronic switches in power circuits.

🔋 Key Specifications

  • Voltage rating (Vces): ~1200 V – can block up to ~1200 volts between the collector and emitter.

  • Collector current (Ic): ~200 A – robust current handling for power electronics.

  • IGBT + diode inside: Yes, the module typically includes both transistor and diode for efficient switching.

  • Operating temperature: From around –40 °C up to +125–150 °C junction temperature.

  • Gate‑emitter drive: Voltage around ±20 V is usual for driving the IGBT gates.

  • Isolation capability: Designed for high voltage systems with good isolation between control and power parts.

⚙️ Features & Behavior

  • Low conduction and switching losses — suitable for efficient power conversion.

  • High surge and pulse tolerance — can handle transient loads beyond continuous current.

  • Compact power module — packaged for mounting on heat sinks and integration into power assemblies.

🛠 Typical Applications

These modules are widely used in medium‑to‑high‑power systems such as:

  • Variable Frequency Drives (VFDs) and motor drives

  • Solar inverters and renewable energy converters

  • Welding machines and UPS systems

  • Industrial power supplies and traction drives

 

https://solissemiconductors.com/wp-content/uploads/2026/02/2MBI200UM-120-50.pdf