Sale!
Awaiting product image

Original price was: ₹6,500.00.Current price is: ₹5,500.00.

Here’s a description and key details for the 2MBI200VB‑120‑50 (often referenced simply as 2MBI200VB‑120), a common medium‑power IGBT module used in industrial power electronics

Category:

Description

What It Is

The 2MBI200VB‑120 is an Insulated Gate Bipolar Transistor (IGBT) half‑bridge power module, typically manufactured by Fuji Electric. It integrates two IGBT transistors in a single package along with free‑wheeling diodes, designed for efficient high‑power switching in industrial systems.

⚙️ Core Electrical Specifications

  • Voltage Rating (V<sub>CES</sub>): 1200 V — suitable for high‑voltage applications.

  • Continuous Collector Current (I<sub>C</sub>): 200 A — able to handle moderate power levels.

  • Configuration: Dual IGBT half‑bridge (2‑pack).

  • Low Inductance Internal Structure: Minimizes switching overshoot/voltage spikes.

  • Fast Switching: Optimized to reduce switching losses and support higher frequency operation.

🌡️ Thermal & Environmental Characteristics

  • Maximum Junction Temperature (T<sub>j</sub>): around 150 °C.

  • Operating Temperature Range: typically –40 °C to +125 °C (junction).

  • Package & Size: Standard chassis‑mount module with isolated baseplate (helps thermal management).

🧰 Typical Applications

This IGBT module is widely used in industrial power electronics, including:

  • Motor drives and inverters

  • Uninterruptible power supplies (UPS)

  • Solar and renewable energy converters

  • Servo amplifiers and welding machines