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Here’s a clear description of the 2MBI450VN-120-50 IGBT power module and what it’s used for:

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Description

What It Is

  • The 2MBI450VN‑120‑50 is a high‑power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. It’s part of their V‑series power semiconductor modules designed for industrial power control applications.

📈 Key Characteristics

  • Voltage Class: 1200 V — suitable for high‑voltage applications.

  • Current Rating: 450 A continuous collector current.

  • Topology: Dual IGBT configuration (half‑bridge style) with two transistors in one module.

  • Built‑in Freewheel Diodes: Integrated diodes across each IGBT for safe switching of inductive loads.

  • Fast Switching & Low Inductance: Designed for efficient switching with reduced electrical noise and loss.

  • Temperature Ratings: Junction up to ~175 °C and typical operating junction ~150 °C.

  • Package: M254 power module with a compact, rugged housing.

⚙️ Function

An IGBT module like this acts as a high‑power electronic switch — controlling large currents and voltages in DC and AC power conversion systems. It combines the gate control ease of a MOSFET with the high‑current handling of a bipolar transistor.

📊 Typical Applications

Used where robust, efficient power switching is needed, such as:

  • Variable frequency motor drives (VFDs / inverters)

  • UPS (Uninterruptible Power Supplies) systems

  • Renewable energy inverters (wind/solar)

  • Industrial power conversion and automation equipment