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Original price was: ₹28,500.00.Current price is: ₹27,500.00.

The 2MBI650VXA‑170 series refers to a high‑power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. It’s designed for industrial power switching and conversion applications such as motor drives, inverters, UPS systems, welding machines, and renewable energy converters

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Description

What It Is

  • It’s a power semiconductor module that contains IGBT transistors and free‑wheeling diodes integrated in a single package to handle high voltage and high current with efficient switching.

  • IGBTs combine the low conduction losses of bipolar transistors with the fast switching of MOSFETs — making them ideal for high‑power PWM (pulse‑width modulation) applications.

⚙️ Key Electrical Specs (Typical for 2MBI650VXA‑170E‑50)

  • Collector‑Emitter Voltage (VCES): ~1700 V — can block up to 1700 V DC.

  • Continuous Collector Current (Ic): ~650 A — very high current handling.

  • Gate‑Emitter Voltage (VGES): ±20 V maximum.

  • Package Size: Approx. 172 × 89 × 38 mm (PrimePACK style).

  • Power Dissipation: ~4150 W (Tc = 25 °C).

  • Operating Temperatures: Typical junction 150–175 °C; storage −40 to +150 °C.

📦 Typical Features

  • High‑speed switching with low inductance internal structure.

  • Integrated free‑wheeling diodes to support efficient current recirculation.

  • Robust mechanical and thermal design for mounting on heatsinks.

  • Used in motor inverters, servo drives, UPS, power converters, and renewable energy systems.