Description

General Description

The 2MBI900VXA‑120 series is a high‑power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric, designed for demanding power‑electronics applications such as motor inverters, UPS systems, industrial drives, and renewable energy converters. It is part of Fuji’s V‑Series PrimePACK family of power modules, offering high current capacity, fast switching, and robust thermal performance.

🔋 Key Electrical Specifications

• Voltage Class: 1200 V (collector‑emitter blocking voltage)

• Continuous Current Rating: ~900 A

• Gate‑Emitter Voltage: ±20 V typical range

• Collector‑Emitter Saturation Voltage (V_CE(sat)): ~1.6–2.2 V typical at rated current

• Power Dissipation: ~5.1 kW module rating

• Maximum Junction Temperature (T_jmax): up to ~175 °C

🧱 Module Structure

• Dual IGBT configuration (half‑bridge), usually implemented as two high‑current switches in a single compact module.

• Packaged in PrimePACK™ (M271) format — a standard high‑power module package with robust terminals for power connections.

🔥 Features & Performance

• Fast switching characteristics for lower switching losses in high‑frequency power conversion.

• Low on‑state voltage drop, helping reduce conduction losses and improve efficiency.

• Designed for high thermal stability and reliability in industrial environments.

• Often paired with dedicated gate drives for optimal performance (e.g., SCALE™‑2 drivers).

🧰 Typical Applications

• Large motor drives and industrial inverters

• Uninterruptible Power Supplies (UPS)

• Renewable energy systems (e.g., solar and wind); utility converters

• High‑power welding equipment and traction drives

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