Sale!
Awaiting product image

Original price was: ₹6,500.00.Current price is: ₹5,500.00.

3MBI50SX‑120 IGBT Module — is a high‑power IGBT (Insulated Gate Bipolar Transistor) module manufactured by FUJI / Fujitsu Electric, primarily used in power electronics for switching and energy conversion applications.

Category:

Description

What It Is

An IGBT module integrates multiple Insulated Gate Bipolar Transistors and associated freewheeling diodes into one compact unit. This design combines high‑speed switching similar to MOSFETs with the high‑current and high‑voltage handling capabilities of bipolar transistors — making it ideal for industrial power conversion systems.

📌 Key Specifications

Here’s a summary of the typical electrical and performance features:

  • Collector‑Emitter Voltage (VCES): 1200 V — suitable for medium‑to‑high voltage systems.

  • Continuous Collector Current (IC): 50 A — defines continuous load capability.

  • Switching Characteristics: High‑speed switching with relatively low conduction and switching losses.

  • Integrated Diodes: Built‑in freewheeling diodes reduce component count and improve efficiency.

  • Thermal Performance & Robustness: Designed for efficient heat management and reliable operation in industrial environments.

⚙️ Typical Applications

This type of module is widely used in:

  • Variable frequency drives (VFDs) for motor control

  • Inverters in renewable energy and UPS systems

  • AC/DC servo drives

  • Industrial power supplies and machinery

Its integrated design simplifies system architecture, reduces PCB complexity, and improves reliability compared to using discrete components.