Description
Overview
The 6MBI100S‑120 is a high‑power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. It’s designed for efficient switching and control in medium‑to‑high power electronic systems.
⚙️ Key Characteristics
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Module Type: IGBT Power Module (S‑series) — contains multiple IGBT switches in one package.
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Configuration: 6‑pack (six IGBTs + free‑wheeling diodes) suitable for three‑phase inverter bridges.
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Collector‑Emitter Voltage (VCES): 1200 V (high voltage capability for power conversion).
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Continuous Collector Current: 100 A at thermal case ~80 °C (higher at lower case temperature).
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Pulsed Current Capability: Up to ~300 A for short pulses (e.g., 1 ms).
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Gate‑Emitter Voltage: ±20 V standard.
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Package: PCB‑mountable power module with screw mounting.
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Operating Temperature: Up to ~150 °C.
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Isolation Voltage: ~2500 VAC (1 minute).
🧠 How It Works
As a power semiconductor module, the 6MBI100S‑120 integrates multiple IGBT chips and diodes to form a complete switching stage used in power electronics. IGBTs combine the benefits of MOSFETs (easy gate drive) and bipolar transistors (high current) — making them ideal for efficient high‑power switching.
📍 Features & Benefits
✔ Low saturation voltage (VCE(sat)) — reduces conduction losses and heat generation.
✔ Compact and robust package — helps save space and simplifies system integration.
✔ High through‑current and thermal capability — suited to demanding industrial use.
📌 Typical Applications
This module is widely used in systems requiring efficient, high‑current switching and power conversion, such as:
• AC and DC motor drives / variable frequency drives (VFDs)
• Inverters for renewable energy (solar, wind)
• Uninterruptible Power Supplies (UPS)
• Industrial power converters and welders
• Servo and automation control systems
