Basic Description

  • The SKIIP11NAB12T4V1 is a power semiconductor module combining a 3-phase bridge inverter, input rectifier, and brake chopper in one package.
  • It is part of SEMIKRON’s MiniSKiiP family.
  • It contains 4 IGBTs (trench technology) and associated freewheeling diodes, plus the supporting circuits.
  • It is intended for inverter applications up to about 8 kVA rating, e.g., driving motors up to about 4 kW under typical conditions.

Key Specifications & Ratings
Here are some of the important electrical/thermal parameters. (“typ” = typical, “max” = maximum)

Parameter Symbol / Condition Typical / Max Value Units
Collector-Emitter Voltage (IGBT) ( V_{CES} ) up to 1200 V V
Continuous Collector Current (IC) at Ts = 25 °C / 70 °C 12 A A
Reverse Collector Current (ICRM) pulsed 24 A A
Forward current for inverse / freewheeling diodes ( I_F ) 14 A at 25 °C, 11 A at 70 °C A
Reverse Voltage of diodes ( V_{RRM} ) 1200 V V
Switching Times / Energy Losses (at Tj = 150 °C) ( t_{on} ), ( t_{off} ), ( E_{on} ), ( E_{off} ) etc.
Chip-level resistances / saturation voltages e.g. ( r_{CE} ), ( V_{CEsat} ) ~150 mΩ (at 25 °C) etc.
Thermal / Temperature Limits Junction temperature (Tj) up to 175 °C °C
Case Temperature limit ( T_C ) 125 °C max °C
Isolation Visol AC, 1 minute 2500 V V
Physical Weight ~35 g grams

Also, there is an internal temperature sensor (R100), which is 100 Ω at 100 °C (± 3 %) for monitoring module temperature

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