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Original price was: ₹6,000.00.Current price is: ₹5,000.00.

Here’s a description of the Fuji 2MBI150U4B-120-50 (closely related to 2MBI150U4B-120, which is a specific variant of this module family):

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Description

Overview

The 2MBI150U4B-120 is a high-power IGBT module (Insulated Gate Bipolar Transistor) designed for industrial power electronics use. It is manufactured by Fuji Electric, known for rugged and efficient power semiconductors.

⚙️ Key Functions

  • Acts as a power switch that can handle high voltage and high current, combining the fast switching of MOSFETs with the high current capability of bipolar transistors.

  • Used to control and convert electrical power in demanding systems.

📊 Typical Specifications

  • Rated Voltage (Collector–Emitter): 1200 V — suitable for high-voltage applications.

  • Rated Current (Collector): 150 A continuous.

  • Switching and Continuity: Designed for efficient switching with low conduction and switching losses.

  • Modules Include: Integrated IGBT chips and fast recovery diodes (common in similar variants).

  • Thermal & Electrical Performance: Robust package for good heat dissipation and stable operation under load.

🧰 Typical Applications

This type of IGBT module is widely used in:

  • Motor drives and variable frequency drives (VFDs)

  • Inverters and converters

  • Uninterruptible Power Supplies (UPS)

  • Industrial automation and power systems

  • Renewable energy inverters (e.g., solar, wind)

📌 Notes

  • IGBT modules like this are not discrete small transistors — they are packaged modules containing multiple power semiconductor elements for high-power systems.

  • Accurate datasheet details (pinout, exact ratings, mounting, protection features) should be obtained from the official manufacturer datasheet.

 

https://solissemiconductors.com/wp-content/uploads/2026/02/2MBI150U4B-120.pdf