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Original price was: ₹40,000.00.Current price is: ₹35,000.00.

The 3MBI150UC‑120 is a power semiconductor module, specifically an IGBT (Insulated Gate Bipolar Transistor) power module manufactured by Fuji Electric (often branded FUJI). It’s used in high‑power electronic applications where efficient switching and power handling are required.

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Description

General Description

  • Type: IGBT power module (three‑in‑one configuration).

  • Voltage rating: ≈ 1200 V collector‑emitter maximum.

  • Current rating: ≈ 150 A continuous (typical).

  • Package: Power module style with multiple terminals.

  • Technology: Uses insulated‑gate bipolar transistors (IGBTs) which combine ease of gate drive with bipolar conduction for high current and voltage.

🔧 Key Features

  • High‑speed switching — suitable for dynamic power conversion.

  • Low inductance module structure, which helps reduce switching losses and improve performance.

  • Voltage drive type, meaning it uses voltage to control the gates of the IGBTs.

  • May include shunt resistors for current sensing depending on specific sub‑variant.

📊 Typical Applications

This type of IGBT module is widely used in applications that require efficient control of high power, such as:

  • Inverters for motor drives (e.g., industrial AC motors).

  • Servo drive amplifiers.

  • Uninterruptible Power Supplies (UPS).

  • Industrial equipment such as welding machines or other power electronics systems.